2SD2161 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 2V, IC= 2A) ·Low Collector Saturation Voltage-.
| Part number | 2SD2161 |
|---|---|
| Datasheet | 2SD2161-InchangeSemiconductor.pdf |
| File Size | 200.47 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 2V, IC= 2A) ·Low Collector Saturation Voltage-.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SD2161 | NPN Transistor | NEC |
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