2SD2161 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 2V, IC= 2A) ·Low Collector Saturation Voltage-.
2SD2161 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor .
| Manufacturer | Part Number | Description |
|---|---|---|
NEC |
2SD2161 | NPN Transistor |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 2V, IC= 2A) ·Low Collector Saturation Voltage-.