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2SD2161 - Silicon NPN Power Transistor

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Part number 2SD2161
Manufacturer Inchange Semiconductor
File Size 200.47 KB
Description Silicon NPN Power Transistor
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Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) High DC Current Gain- : hFE= 2000(Min)@ (VCE= 2V, IC= 2A) Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 2A, IB= 2mA) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplifiers and low- speed switching applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V

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