High DC Current Gain-
: hFE = 1000(Min)@ IC= 10A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Be ideal for direct driving from the IC output of devices
such as pulse
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD2163
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= 10A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Be ideal for direct driving from the IC output of devices
such as pulse motor drivers and relay drivers of PC terminals. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO VCEO VEBO
IC ICM
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak
150
V
100
V
8
V
10
A
20
A
IB
Base Current- Continuous
1
A
PC
Collector Power Dissipation
30
W
Tj
Max.
2SD2163 Datasheet
