2SD560 - NPN Transistor

NEC (now Renesas Electronics)

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

C-to-E reverse diode inserted.
Low collector saturation voltage (TO-220AB).

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2SD560 npn transistor by NEC (now Renesas Electronics) - Datasheet Preview

Datasheet Details

Part number	2SD560
Manufacturer	NEC (now Renesas Electronics)
File Size	270.85 KB
Description	NPN Transistor
Datasheet	2SD560 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DATA SHEET SILICON POWER TRANSISTOR 2SD560 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching. This transistor is ideal for direct driving from the IC output of devices such as pulse motor drivers and relay drivers, and PC terminals.