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2SJ600

Manufacturer: NEC (now Renesas Electronics)

2SJ600 datasheet preview

Datasheet Details

Part number	2SJ600
Datasheet	2SJ600_NEC.pdf
File Size	74.45 KB
Manufacturer	NEC (now Renesas Electronics)
Description	P-Channel Power MOSFET

2SJ600 Overview

The 2SJ600 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. ORDERING INFORMATION PART NUMBER 2SJ600 PACKAGE TO-251 TO-252.

2SJ600 Key Features

Low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS = -10 V, ID = -13 A) RDS(on)2 = 79 mΩ MAX. (VGS = -4.0 V, ID = -13 A
Low Ciss: Ciss = 1900 pF TYP
Built-in gate protection diode
TO-251/TO-252 package

2SJ600 from other manufacturers

See all manufacturers

Brand Logo	Part Number	Description	Other Manufacturers
	2SJ600	MOSFET	Kexin
	2SJ600-Z	P-Channel MOSFET	Kexin

More Datasheets from NEC (now Renesas Electronics)

See all NEC (now Renesas Electronics) datasheets

Part Number	Description
2SJ601	P-Channel Power MOSFET
2SJ602	MOS FIELD EFFECT TRANSISTOR
2SJ603	MOS FIELD EFFECT TRANSISTOR
2SJ604	P-Channel Power MOSFET
2SJ605	MOS FIELD EFFECT TRANSISTOR
2SJ606	MOS FIELD EFFECT TRANSISTOR
2SJ607	MOS FIELD EFFECT TRANSISTOR
2SJ621	MOS FIELD EFFECT TRANSISTOR
2SJ624	MOS FIELD EFFECT TRANSISTOR
2SJ625	MOS FIELD EFFECT TRANSISTOR

2SJ600 Distributor