2SJ600 Datasheet MOSFET

Manufacturer: Kexin Semiconductor

Overview: SMD Type MOS Field Effect Transistor 2SJ600.

Datasheet Details

Low on-resistance RDS(on)1 = 50 m RDS(on)2 = 79m MAX. (VGS =-10 V, ID = -13 A) MAX. (VGS = -4.0 V, ID =-13 A) +0.15 5.55-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 IC MOSFET TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm +0.2 9.70-0.2 +0.1 0.80-0.1 +0.15 0.50-0.15 Built-in gate protection diode 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 1 Gate 2 Drain 3 Source 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source volta.

Brand Logo	Part Number	Description	Manufacturer
	2SJ600	P-Channel Power MOSFET	NEC

Part Number	Description
2SJ600-Z	P-Channel MOSFET
2SJ601	MOS Field Effect Transistor
2SJ602	MOS Field Effect Transistor
2SJ602-ZJ	P-Channel MOSFET
2SJ603	MOS Field Effect Transistor
2SJ603-ZJ	P-Channel MOSFET
2SJ604	MOS Field Effect Transistors
2SJ604-ZJ	P-Channel MOSFET
2SJ605	MOS Field Effect Transistors
2SJ605-ZJ	P-Channel MOSFET