NEC 2SJ600
The 2SJ600 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.| Part No. | 2SJ600 |
|---|---|
| Datasheet | 2SJ600 Download |
| Manufacturer |  NEC |
| Description | P-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
ORDERING INFORMATION PART NUMBER 2SJ600 PACKAGE TO-251 TO-252FEATURES
● Low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS = –10 V, ID = –13 A) RDS(on)2 = 79 mΩ MAX. (VGS = –4.0 V, ID = –13 A)● Low Ciss: Ciss = 1900 pF TYP.
● Built-in gate protection diode
● TO-251/TO-252 package 2SJ600-Z
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C) Drain to Source Voltage (VGS = 0 V) (TO-251) –60 + 20 + 25 + 70 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg V V A A W W °C °C A mJ (TO-252) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 45 1.0 150 –55 to +150 –25 62.5 IAS EAS Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, RG = 25 Ω, VGS = –20 V ¡ 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
