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2SJ600 - P-Channel Power MOSFET

General Description

The 2SJ600 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.

Key Features

  • Low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 13 A) RDS(on)2 = 79 mΩ MAX. (VGS =.
  • 4.0 V, ID =.
  • 13 A).
  • Low Ciss: Ciss = 1900 pF TYP.
  • Built-in gate protection diode.
  • TO-251/TO-252 package 2SJ600-Z.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ600 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ600 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. ORDERING INFORMATION PART NUMBER 2SJ600 PACKAGE TO-251 TO-252 FEATURES • Low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS = –10 V, ID = –13 A) RDS(on)2 = 79 mΩ MAX. (VGS = –4.0 V, ID = –13 A) • Low Ciss: Ciss = 1900 pF TYP. • Built-in gate protection diode • TO-251/TO-252 package 2SJ600-Z ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) www.DataSheet4U.