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2SJ649 - MOS FIELD EFFECT TRANSISTOR

NEC

The 2SJ649 by NEC is a MOS FIELD EFFECT TRANSISTOR. Below is the official datasheet preview.

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2SJ649 MOS FIELD EFFECT TRANSISTOR by NEC - Datasheet Preview — Official preview page of the 2SJ649 MOS FIELD EFFECT TRANSISTOR datasheet (NEC).

Datasheet Details

Part number	2SJ649
Manufacturer	NEC
File Size	104.53 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	2SJ649_NEC.pdf
Additional preview pages of the 2SJ649 datasheet.

2SJ649 Product details

Description

The 2SJ649 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.

Features

Low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS =.
10 V, ID =.
10 A) RDS(on)2 = 75 mΩ MAX. (VGS =.
4.0 V, ID =.
10 A).
Low input capacitance: Ciss = 1900 pF TYP. (VDS =.
10 V, VGS = 0 V).
Built-in gate protection diode (Isolated TO-220).

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Published: Jan 25, 2007 |