Part number:
2SJ649
Manufacturer:
NEC
File Size:
104.53 KB
Description:
Mos field effect transistor.
* Low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS =
* 10 V, ID =
* 10 A) RDS(on)2 = 75 mΩ MAX. (VGS =
* 4.0 V, ID =
* 10 A)
* Low input capacitance: Ciss = 1900 pF TYP. (VDS =
* 10 V, VGS = 0 V)
* Built-in gate protection diode (Isolated
2SJ649
NEC
104.53 KB
Mos field effect transistor.
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