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2SJ649 Datasheet MOS FIELD EFFECT TRANSISTOR

Manufacturer: NEC (now Renesas Electronics)

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2SJ649 mos field effect transistor by NEC (now Renesas Electronics) - Datasheet Preview

Datasheet Details

Part number	2SJ649
Manufacturer	NEC (now Renesas Electronics)
File Size	104.53 KB
Description	MOS FIELD EFFECT TRANSISTOR
Download	2SJ649 Download (PDF)

General Description

The 2SJ649 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.

ORDERING INFORMATION PART NUMBER 2SJ649 PACKAGE Isolated TO-220

Overview

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ649 SWITCHING P-CHANNEL POWER MOS.

Key Features

Low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS =.
10 V, ID =.
10 A) RDS(on)2 = 75 mΩ MAX. (VGS =.
4.0 V, ID =.
10 A).
Low input capacitance: Ciss = 1900 pF TYP. (VDS =.
10 V, VGS = 0 V).
Built-in gate protection diode (Isolated TO-220).

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