2SJ649 Datasheet, NEC

2SJ649 transistor equivalent, mos field effect transistor.

Avg. rating / M : 1.0 rating-1

Features and benefits

* Low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS =
  –10 V, ID =
  –10 A) RDS(on)2 = 75 mΩ MAX. (VGS =
  –4.0 V, ID = <.

Image gallery

TAGS

Stock & price

Since 2006. D4U Semicon. | Contact Us | Privacy Policy | Purchase of parts