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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1485
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION The 2SK1485, N-channel vertical type MOS FET is a switching device which can be driven directly by the output of ICs having a 5 V power source. As the MOS FET has low on-state resistance and excellent switching characteristics, it is suitable for driving actuators such as motors, relays, and solenoids.
FEATURES • Directly driven by ICs having a 5 V power source. • Low on-state resistance
RDS(on)1 = 1.2 Ω MAX. (VGS = 4.0 V, ID = 0.5 A) RDS(on)2 = 0.8 Ω MAX. (VGS = 10 V, ID = 0.5 A) • Complementary to 2SJ199.
PACKAGE DRAWING (Unit : mm)
4.5 ± 0.1 1.6 ± 0.2
1.5 ± 0.1
0.8 MIN. 2.5 ± 0.1
4.0 ± 0.25
123
0.42 ±0.06 1.5
0.42 0.47 ±0.06 ±0.06
3.0
0.41+–00..0053
1.Source 2.
2SK1485 Datasheet
