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  NEC Electronic Components Datasheet  

2SK1485 Datasheet

N-Channel MOSFET

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1485
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The 2SK1485, N-channel vertical type MOS FET is a switching device
which can be driven directly by the output of ICs having a 5 V power source.
As the MOS FET has low on-state resistance and excellent switching
characteristics, it is suitable for driving actuators such as motors, relays,
and solenoids.
FEATURES
Directly driven by ICs having a 5 V power source.
Low on-state resistance
RDS(on)1 = 1.2 MAX. (VGS = 4.0 V, ID = 0.5 A)
RDS(on)2 = 0.8 MAX. (VGS = 10 V, ID = 0.5 A)
Complementary to 2SJ199.
PACKAGE DRAWING (Unit : mm)
4.5 ± 0.1
1.6 ± 0.2
1.5 ± 0.1
123
0.42
±0.06 1.5
0.42
0.47 ±0.06
±0.06
3.0
0.41+–00..0053
1.Source
2.Drain
3.Gate
MARK : NC
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
100
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
5 Drain Current (DC) (TC = 25°C)
ID(DC)
±1.0
A
Drain Current (pulse) Note1
ID(pulse)
±2.0
A
Total Power Dissipation (TA = 25°C) Note2
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg 55 to +150 °C
Notes1. PW 10 ms, Duty Cycle 50%
2. Mounted on ceramic board of 16 cm2 × 0.7 mm
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15680EJ3V0DS00 (3rd edition)
(Previous No. TC-2349)
The mark 5 shows major revised points.
©
Date Published July 2001 NS CP(K)
Printed in Japan
1991, 2001


  NEC Electronic Components Datasheet  

2SK1485 Datasheet

N-Channel MOSFET

No Preview Available !

2SK1485
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS
VDS = 100 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 0.5 A
Drain to Source On-state Resistance
RDS(on)1
VGS = 4.0 V, ID = 0.5 A
RDS(on)2
VGS = 10 V, ID = 0.5 A
Input Capacitance
Ciss
VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 25 V, ID = 0.5 A
Rise Time
tr
VGS = 10 V
Turn-off Delay Time
td(off)
RG = 10
Fall Time
tf
SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
0 10%
VGS
90%
ID
90%
ID
ID
0 10%
Wave Form
90%
10%
td(on) tr td(off) tf
ton
toff
MIN.
0.8
0.4
TYP.
1.2
0.6
0.5
230
80
12
14
14
370
65
MAX.
10
±10
2.0
1.2
0.8
UNIT
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
2
Data Sheet D15680EJ3V0DS


Part Number 2SK1485
Description N-Channel MOSFET
Maker NEC
PDF Download

2SK1485 Datasheet PDF





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