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2SK1485 - N-Channel MOSFET

General Description

The 2SK1485, N-channel vertical type MOS FET is a switching device which can be driven directly by the output of ICs having a 5 V power source.

Key Features

  • Directly driven by ICs having a 5 V power source.
  • Low on-state resistance RDS(on)1 = 1.2 Ω MAX. (VGS = 4.0 V, ID = 0.5 A) RDS(on)2 = 0.8 Ω MAX. (VGS = 10 V, ID = 0.5 A).
  • Complementary to 2SJ199.

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Datasheet Details

Part number 2SK1485
Manufacturer Renesas
File Size 111.62 KB
Description N-Channel MOSFET
Datasheet download datasheet 2SK1485 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1485 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK1485, N-channel vertical type MOS FET is a switching device which can be driven directly by the output of ICs having a 5 V power source. As the MOS FET has low on-state resistance and excellent switching characteristics, it is suitable for driving actuators such as motors, relays, and solenoids. FEATURES • Directly driven by ICs having a 5 V power source. • Low on-state resistance RDS(on)1 = 1.2 Ω MAX. (VGS = 4.0 V, ID = 0.5 A) RDS(on)2 = 0.8 Ω MAX. (VGS = 10 V, ID = 0.5 A) • Complementary to 2SJ199. PACKAGE DRAWING (Unit : mm) 4.5 ± 0.1 1.6 ± 0.2 1.5 ± 0.1 0.8 MIN. 2.5 ± 0.1 4.0 ± 0.25 123 0.42 ±0.06 1.5 0.42 0.47 ±0.06 ±0.06 3.0 0.41+–00..0053 1.Source 2.