* Gate can be driven by 2.5 V
* Because of its high input impedance, there’s no need to consider drive current 0.3 Marking 0.9 ±0.1 Marking: G22 EQUIVALENT CURCUIT Drain (D) Gate (G) Gate protection diode Source (S) Internal diode 0 to 0.1 PIN CONNECTIONS S: Source D: Drain
2SK2090
NEC
59.57 KB
N-channel mos fet.
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2090 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2090 is an N-channel vertical MOS FET. Because it .
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