* Low On-Resistance
2SK2357: RDS(on) = 0.9 Ω (VGS = 10 V, ID = 3.0 A)
15.0 ±0.3
2SK2358: RDS(on) = 1.0 Ω (VGS = 10 V, ID = 3.0 A)
* Low Ciss Ciss = 1050 pF TYP.
PACKAGE DIMENSIONS
(in millimeters)
10.0 ±0.3 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2
FEATURES
* Low On-Resistance
2SK2357: R.
The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeters)
10.0 ±0.3 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2
FEATURES
* Low On-Resistance
2SK2357: RDS(on) = 0.9 Ω (VGS .
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