* Low On-Resistance
2SK2359: RDS(on) = 0.9 Ω (VGS = 10 V, ID = 4.0 A) 2SK2360: RDS(on) = 1.0 Ω (VGS = 10 V, ID = 4.0 A)
4 1 2 3
6.0 MAX.
* Low Ciss Ciss = 1050.
4.8 MAX. 1.3 ± 0.2
FEATURES
* Low On-Resistance
2SK2359: RDS(on) = 0.9 Ω (VGS = 10 V, ID = 4.0 A) 2SK2360: RDS(o.
The 2SK2359, 2SK2359-Z/2SK2360, 2SK2360-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching
3.0 ± 0.3
PACKAGE DIMENSIONS (in millimeters)
10.6 MAX. 3.6 ± 0.2 10.0
5.9 MIN. 12.7 MIN. 15.5 MAX.
applications.
4.8 MAX. 1.3 ±.
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