* Low On-Resistance 2SK2365: RDS(on) = 0.5 Ω (VGS = 10 V, ID = 5.0 A) 2SK2366: RDS(on) = 0.6 Ω (VGS = 10 V, ID = 5.0 A) 4 1 2 3
* Low Ciss Ciss = 1 600 pF TYP. .

4.8 MAX. 1.3 ± 0.2 FEATURES
* Low On-Resistance 2SK2365: RDS(on) = 0.5 Ω (VGS = 10 V, ID = 5.0 A) 2SK2366: RDS(o.

The 2SK2365, 2SK2365-Z/2SK2366, 2SK2366-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching 3.0 ± 0.3 PACKAGE DIMENSIONS (in millimeters) 10.6 MAX. 3.6 ± 0.2 10.0 5.9 MIN. 12.7 MIN. 15.5 MAX. applications. 4.8 MAX. 1.3 ±.

2SK2360

2SK2361

2SK2362

2SK2363

2SK2364

2SK2365

2SK2367

2SK2368

2SK2369

2SK2311

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