* Super Low On-State Resistance RDS(on)1 = 6.5 mΩ (MAX.) (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.7 mΩ (MAX.) (VGS = 4.0 V, ID = 35 A)
* Low Ciss : Ciss = 7200 pF (TY.

FEATURES
* Super Low On-State Resistance RDS(on)1 = 6.5 mΩ (MAX.) (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.7 mΩ (MAX.).

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES
* Super Low On-State Resistance RDS(on)1 = 6.5 mΩ (MAX.) (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.7 mΩ (MAX.) (VGS = 4.0 V, ID = 35 A) <.

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