2SK2981 fet equivalent, switching n-channel power mos fet.
6.5 ±0.2 5.0 ±0.2
1.6 ±0.2 1.5
–0.1
* Low on-resistance RDS(on)1 = 27 mΩ (MAX.) (VGS = 10 V, ID = 10 A) RDS(on)2 = 40 mΩ (MAX.) (VGS = 4.5 V, ID = 10.
PACKAGE DRAWING (Unit : mm) FEATURES
6.5 ±0.2 5.0 ±0.2
1.6 ±0.2 1.5
–0.1
* Low on-resistance RDS(.
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