2SK3058 datasheet, mosfet equivalent, NEC

Features and benefits

* Super Low On-State Resistance RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 28 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 28 A)
* Low Ciss : Ciss = 2100 pF (TYP.)

Application

FEATURES
* Super Low On-State Resistance RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 28 A) RDS(on)2 = 27 mΩ MAX. (VGS .

Description

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES
* Super Low On-State Resistance RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 28 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 28 A)
* L.

Image gallery