Datasheet4U Logo Datasheet4U.com

2SK3296 - MOSFET

General Description

The 2SK3296 is N-Channel MOS FET device that

Key Features

  • a low on-state resistance and excellent switching characteristics, designed for low voltage high current.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK3296 MOS Field Effect Transistor Kexin
2SK3290 N-Channel MOSFET Hitachi Semiconductor
2SK3291 N-Channel MOSFET Sanyo Semicon Device
2SK3292 N-Channel MOSFET Sanyo Semicon Device
2SK3293 N-Channel MOSFET Sanyo Semicon Device

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SK3294 SWITCHING N-CHANNEL POWER MOSFET
2SK3295 SWITCHING N-CHANNEL POWER MOSFET
2SK3297 MOSFET
2SK3298 N-Channel MOSFET
2SK3299 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3296 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3296 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3296 2SK3296-S 2SK3296-ZK 2SK3296-ZJ PACKAGE TO-220AB TO-262 TO-263(MP-25ZK) TO-263(MP-25ZJ) FEATURES • 4.5 V drive available • Low on-state resistance RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 18 A) • Low gate charge QG = 30 nC TYP.