2SK3356 datasheet, mosfet equivalent, NEC

Features and benefits

* Super low on-state resistance: 5 5 RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 38 A) RDS(on)2 = 12 mΩ MAX. (VGS = 4 V, ID = 38 A)
* Built-in gate protection diode .

Application

FEATURES
* Super low on-state resistance: 5 5 RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 38 A) RDS(on)2 = 12 mΩ MAX..

Description

The 2SK3356 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES
* Super low on-state resistance: 5 5 RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 38 A) RDS(on)2 = 12 mΩ MAX. (VGS = 4 V, ID = 38 A)
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