* Low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 28 mΩ MAX. (VGS = 4.5 V, ID = 20 A) 5
* Low Ciss: Ciss = 4900 pF TYP.
* Built-in gate protection diode
* Isolated TO-220 package (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
2SK3361
NEC
40.75 KB
N-channel mosfet.
PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3361 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3361.
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