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  NEC Electronic Components Datasheet  

2SK3507 Datasheet

SWITCHING N-CHANNEL POWER MOSFET

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3507
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3507 is N-channel MOS FET device that features
www.DataSheet4U.caolmow on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as DC/DC
converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3507-ZK
TO-252 (MP-3ZK)
FEATURES
4.5 V drive available
Low on-state resistance
RDS(on)1 = 45 mMAX. (VGS = 10 V, ID = 11 A)
Low gate charge
QG = 8.5 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 22 A)
Built-in G-S protection diode
Surface mount package available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
Total Power Dissipation Note2
PT1
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg
IAS
EAS
30
±16
±22
±45
20
1.5
150
55 to +150
10
10
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW 10 µs, Duty Cycle 1%
2. Mounted on glass epoxy board of 1 inch x 1 inch x 1.6 mm
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 , VGS = 20 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15387EJ1V0DS00 (1st edition)
Date Published December 2003 NS CP(K)
Printed in Japan
2001


  NEC Electronic Components Datasheet  

2SK3507 Datasheet

SWITCHING N-CHANNEL POWER MOSFET

No Preview Available !

2SK3507
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
VDS = 30 V, VGS = 0 V
VGS = ±16 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 4.0 V, ID = 11 A
VGS = 10 V, ID = 11 A
RDS(on)2 VGS = 4.5 V, ID = 11 A
Input Capacitance
Ciss VDS = 10 V
Output Capacitance
www.DataSheet4U.com
Reverse Transfer Capacitance
Coss
Crss
VGS = 0 V
f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 15 V, ID = 11 A
Rise Time
Turn-off Delay Time
tr
td(off)
VGS = 10 V
RG = 10
Fall Time
Total Gate Charge
tf
QG VDD = 24 V
Gate to Source Charge
QGS
VGS = 10 V
Gate to Drain Charge
Body Diode Forward Voltage Note
QGD
VF(S-D)
ID = 22 A
IF = 22 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
Note Pulsed
trr IF = 22 A, VGS = 0 V
Qrr di/dt = 100 A/µs
MIN.
1.5
6
TYP.
28
46
360
125
65
6.6
3.6
16
5.3
8.5
2
2.1
1.0
31
26
MAX.
10
±10
2.5
45
76
UNIT
µA
µA
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D15387EJ1V0DS


Part Number 2SK3507
Description SWITCHING N-CHANNEL POWER MOSFET
Maker NEC
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2SK3507 Datasheet PDF






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