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2SK3653C - MOSFET

General Description

The 2SK3653C contains a diode and high resistivity between its gates and sources, for achieving short stability package and low noise, the 2SK3653C is especially suitable 1.2 ±0.1 0.2 PACKAGE DRAWING (Unit: mm) 0.3 ±0.05 0.13 +0.1 –0.05 time during power-on.

In addition, because of its compact for compact ECMs for audio or mobile devices such as cellphones.

0.8 ±0.1 3 0 to 0.05

Overview

www.DataSheet4U.com DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3653C N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF.

Key Features

  • Low noise:.
  • 108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ).
  • Containing a diode and high resistivity, short stability time is achieved during power-on.
  • Super thin thickness package: 3pXSOF (0814) t = 0.37 mm TYP. 0.45 0.45 MAX. 0.4 1.4 ±0.1 0.2 +0.1.