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2SK3899 - SWITCHING N-CHANNEL POWER MOSFET

Description

The 2SK3899 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.5 mΩ MAX. (VGS = 4.5 V, ID = 42 A).
  • Low C iss: C iss = 5500 pF TYP.
  • Built-in gate protection diode (TO-263).

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Datasheet Details

Part number 2SK3899
Manufacturer NEC
File Size 154.71 KB
Description SWITCHING N-CHANNEL POWER MOSFET
Datasheet download datasheet 2SK3899 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3899 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3899 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3899-ZK PACKAGE TO-263 (MP-25ZK) FEATURES • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.5 mΩ MAX. (VGS = 4.5 V, ID = 42 A) • Low C iss: C iss = 5500 pF TYP. • Built-in gate protection diode (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 60 ±20 ±84 ±336 146 1.5 150 −55 to +150 245 49.