Datasheet4U Logo Datasheet4U.com

2SK3900 - SWITCHING N-CHANNEL POWER MOSFET

Description

The 2SK3900 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 41 A).
  • Low C iss: C iss = 3500 pF TYP.
  • Built-in gate protection diode (TO-263).

📥 Download Datasheet

Datasheet preview – 2SK3900

Datasheet Details

Part number 2SK3900
Manufacturer NEC
File Size 152.09 KB
Description SWITCHING N-CHANNEL POWER MOSFET
Datasheet download datasheet 2SK3900 Datasheet
Additional preview pages of the 2SK3900 datasheet.

📁 Similar Datasheet

  • 2SK3900-ZP - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK3901-ZK - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK3902-ZK - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK3903 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK3903 - N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK3904 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK3904 - N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK3905 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK3905 - N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK3906 - N-Channel MOSFET Transistor (Inchange Semiconductor)
Other Datasheets by NEC
  • 2SK3901 - SWITCHING N-CHANNEL POWER MOSFET
  • 2SK3902 - SWITCHING N-CHANNEL POWER MOSFET
  • 2SK3918 - SWITCHING N-CHANNEL POWER MOSFET
  • 2SK3919 - SWITCHING N-CHANNEL POWER MOSFET
  • 2SK3943 - SWITCHING N-CHANNEL POWER MOSFET
  • 2SK3984 - N-Channel Power MOSFET
  • 2SK3991 - SWITCHING N-CHANNEL POWER MOSFET
  • 2SK3992 - SWITCHING N-CHANNEL POWER MOSFET

Full PDF Text Transcription

Click to expand full text
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3900 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3900 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3900-ZP PACKAGE TO-263 (MP-25ZP) FEATURES • Super low on-state resistance RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 41 A) • Low C iss: C iss = 3500 pF TYP. • Built-in gate protection diode (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 60 ±20 ±82 ±246 104 1.5 150 −55 to +150 141 37.
Published: |