| Part Number | 2SK3900 |
|---|---|
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type MOSFET MOS Field Effect Transistor 2SK3900 Features Low On-state resistance RDS(on)1 = 8.0mÙ MAX. (VGS = 10 V, ID = 41A) RDS(on)2 = 10 mÙ MAX. (VGS = 4.5 V, ID = 41 A) Low C iss: C iss =35. Low On-state resistance RDS(on)1 = 8.0mÙ MAX. (VGS = 10 V, ID = 41A) RDS(on)2 = 10 mÙ MAX. (VGS = 4.5 V, ID = 41 A) Low C iss: C iss =3500 pF TYP. Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TA=25 TC=25 Channel temperatur. |
2SK3900 Datasheet
The 2SK3900 is a MOS Field Effect Transistor.
| Part Number | 2SK3900 |
|---|---|
| Description | SWITCHING N-CHANNEL POWER MOSFET |
| Manufacturer | NEC |
| Overview |
The 2SK3900 is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER 2SK3900-ZP PACKAGE TO-263 (MP-25ZP)
FEATURES
• Super low on-st.
* Super low on-state resistance RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 41 A) * Low C iss: C iss = 3500 pF TYP. * Built-in gate protection diode (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (. |