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  NEC Electronic Components Datasheet  

2SK4178 Datasheet

N-CHANNEL POWER MOS FET

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4178
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
FEATURES
Low on-state resistance
RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 30 A)
Low gate to drain charge
QGD = 3.7 nC TYP. (VDD = 15 V, ID = 30 A)
4.5 V drive available
ORDERING INFORMATION
PART NUMBER
2SK4178(1)-S27-AY Note
2SK4178-ZK-E1-AY Note
2SK4178-ZK-E2-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tube 75 p/tube
Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode).
PACKAGE
TO-251 (MP-3-b) typ. 0.34 g
TO-252 (MP-3ZK) typ. 0.27 g
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
30
±20
±48
±144
33
1.0
150
55 to +150
23
52.9
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW 10 μs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 0 V, L = 0.1 mH
(TO-251)
(TO-252)
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19080EJ1V0DS00 (1st edition)
Date Published December 2007 NS
Printed in Japan
2007


  NEC Electronic Components Datasheet  

2SK4178 Datasheet

N-CHANNEL POWER MOS FET

No Preview Available !

2SK4178
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 30 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Gate to Source Threshold Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(th)
| yfs |
RDS(on)1
VDS = VGS, ID = 250 μA
VDS = 10 V, ID = 12 A
VGS = 10 V, ID = 30 A
RDS(on)2
VGS = 4.5 V, ID = 12 A
Input Capacitance
Ciss VDS = 10 V,
Output Capacitance
Coss
VGS = 0 V,
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 15 V, ID = 30 A,
Rise Time
tr VGS = 10 V,
Turn-off Delay Time
Fall Time
td(off)
tf
RG = 3 Ω
Total Gate Charge
QG1 VDD = 15 V, VGS = 10 V, ID = 30 A
QG2 VDD = 15 V, VGS = 4.5 V, ID = 30 A
Gate to Source Charge
QGS VDD = 15 V, ID = 30 A
Gate to Drain Charge
QGD
Gate Resistance
Body Diode Forward Voltage Note
RG
VF(S-D)
IF = 30 A, VGS = 0 V
Reverse Recovery Time
trr IF = 30 A, VGS = 0 V,
Reverse Recovery Charge
Note Pulsed
Qrr di/dt = 100 A/μs
MIN. TYP. MAX. UNIT
10 μA
±100 nA
1.5 2.0 2.5
V
7 15
S
6.8 9.0 mΩ
9.8 15 mΩ
1500
pF
360 pF
126 pF
9 ns
9.7 ns
32 ns
7.7 ns
24 nC
11.5
nC
3.7 nC
3.7 nC
1.2 Ω
0.87 1.5
V
29 ns
23 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
TEST CIRCUIT 3 GATE CHARGE
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D.U.T.
IG = 2 mA
RL
PG. 50 Ω
VDD
2
Data Sheet D19080EJ1V0DS


Part Number 2SK4178
Description N-CHANNEL POWER MOS FET
Maker NEC
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2SK4178 Datasheet PDF






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