2SK4178
Description
The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
Key Features
- Low on-state resistance RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 30 A)
- Low gate to drain charge QGD = 3.7 nC TYP. (VDD = 15 V, ID = 30 A)
- 4.5 V drive available
