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2SK4178 - N-CHANNEL POWER MOSFET

General Description

The 2SK4178 is N-channel MOS FET device that

Key Features

  • a low on-state resistance and excellent switching characteristics, and designed for low voltage high current.

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Datasheet Details

Part number 2SK4178
Manufacturer NEC
File Size 242.47 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet 2SK4178 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4178 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 30 A) • Low gate to drain charge QGD = 3.7 nC TYP. (VDD = 15 V, ID = 30 A) • 4.5 V drive available ORDERING INFORMATION PART NUMBER 2SK4178(1)-S27-AY 2SK4178-ZK-E1-AY 2SK4178-ZK-E2-AY Note Note Note LEAD PLATING PACKING Tube 75 p/tube PACKAGE TO-251 (MP-3-b) typ. 0.34 g TO-252 (MP-3ZK) typ. 0.