Datasheet4U Logo Datasheet4U.com

2SK4178-ZK - N-Channel MOSFET Transistor

General Description

and solenoid drive.

Key Features

  • Drain Current : ID= 48A@ TC=25℃.
  • Drain Source Voltage : VDSS= 30V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 9.0mΩ(Max) @ VGS= 10V.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK4178 N-CHANNEL POWER MOSFET NEC
2SK417 Silicon N-Channel MOSFET Toshiba Semiconductor
2SK4171 N-Channel Silicon MOSFET Sanyo Semicon Device
2SK4174 Silicon N-channel enhancement MOS FET Panasonic
2SK4177 N-Channel Silicon MOSFET Sanyo Semicon Device

Other Datasheets by Inchange Semiconductor

Part Number Description
2SK4178 N-Channel MOSFET Transistor
2SK4171 N-Channel MOSFET Transistor
2SK4179 N-Channel MOSFET Transistor
2SK4100LS N-Channel MOSFET Transistor
2SK4101LS N-Channel MOSFET Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor 2SK4178-ZK FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9.0mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 30 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 48 A IDM Drain Current-Single Pluse 144 A PD Total Dissipation @TC=25℃ 33 W TJ Max.