2SK4178 Datasheet | NEC

DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES - Low on-state resistance RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 30 A) - Low gate to drain charge QGD = 3.7 n C TYP. (VDD = 15 V, ID = 30 A) - 4.5 V drive available ORDERING INFORMATION PART NUMBER 2SK4178(1)-S27-AY 2SK4178-ZK-E1-AY 2SK4178-ZK-E2-AY Note Note Note LEAD PLATING PACKING Tube 75 p/tube PACKAGE TO-251 (MP-3-b) typ. 0.34 g TO-252 (MP-3ZK) typ. 0.27 g Pure Sn (Tin) Tape 2500 p/reel Note Pb-free (This product does not contain Pb in external electrode). ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 (TO-251) 30 ±20 ±48 ±144 33 1.0 150 - 55 to +150 23 52.9 V V A A W W °C °C A m J (TO-252) VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 0.1 m H .. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D19080EJ1V0DS00 (1st edition) Date Published December 2007 NS Printed in Japan ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(th) | yfs | RDS(on)1 RDS(on)2 TEST CONDITIONS VDS =...