The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Ordering number : ENA0869
2SK4177
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK4177
Features
• • •
General-Purpose Switching Device Applications
Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings 1500 ±20 2 4 1.