Datasheet Details
| Part number | 2SK4177 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 228.02 KB |
| Description | N-Channel MOSFET |
| Datasheet | 2SK4177-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor ·.
| Part number | 2SK4177 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 228.02 KB |
| Description | N-Channel MOSFET |
| Datasheet | 2SK4177-INCHANGE.pdf |
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·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage : VDSS= 1500V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Designed for high current, high speed switching, switch mode power supplies。 ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage 1500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous 2 A ID(puls) Pulse Drain Current 4 A PD Power Dissipation@TC=25℃ 80 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Thermal Resistance, Junction to Case MAX 1.56 UNIT ℃/W 2SK4177 .
isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current CONDITIONS VGS= 0;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SK4177 | N-Channel Silicon MOSFET | Sanyo Semicon Device |
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2SK4177 | N-Channel Power MOSFET | ON Semiconductor |
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