Datasheet4U Logo Datasheet4U.com

2SK4177 - N-Channel MOSFET

General Description

Drain Current ID= 2A@ TC=25℃ Drain Source Voltage : VDSS= 1500V(Min) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current, high speed switching, switch mode power supplies。 ABSOL

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK4177 N-Channel Silicon MOSFET Sanyo Semicon Device
2SK4177 N-Channel Power MOSFET ON Semiconductor
2SK417 Silicon N-Channel MOSFET Toshiba Semiconductor
2SK4171 N-Channel Silicon MOSFET Sanyo Semicon Device
2SK4171 N-Channel MOSFET Transistor Inchange Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SK4115 N-Channel MOSFET
2SK4145 N-Channel MOSFET
2SK4161D N-Channel MOSFET
2SK4013 N-Channel MOSFET
2SK4014 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage : VDSS= 1500V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Designed for high current, high speed switching, switch mode power supplies。 ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage 1500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous 2 A ID(puls) Pulse Drain Current 4 A PD Power Dissipation@TC=25℃ 80 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Thermal Resistance, Junction to Case MAX 1.56 UNIT ℃/W 2SK4177 . isc website：www.