2SK4177 Datasheet and Specifications PDF

The 2SK4177 is a N-Channel Power MOSFET.

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Part Number2SK4177 Datasheet
Manufactureronsemi
Overview Ordering number : ENA0869A 2SK4177 N-Channel Power MOSFET 1500V, 2A, 13Ω, TO-263-2L Features • ON-resistance RDS(on)=10Ω(typ.) • 10V drive Specifications Absolute Maximum Rating.
* ON-resistance RDS(on)=10Ω(typ.)
* 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature.
Part Number2SK4177 Datasheet
DescriptionN-Channel Silicon MOSFET
ManufacturerSANYO
Overview Ordering number : ENA0869 2SK4177 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4177 Features • • • General-Purpose Switching Device Applications Low ON-resistance, low input capac.
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* General-Purpose Switching Device Applications Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Vo.
Part Number2SK4177 Datasheet
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage : VDSS= 1500V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Designe. Voltage VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current CONDITIONS VGS= 0; ID= 1mA VDS= VGS; ID= 1mA IS= 2A ; VGS= 0 VGS= 10V; ID= 1A VGS= ±16V; VDS= 0 VDS= 1200V; VGS= 0 2SK4177 MIN MAX UNIT 1500 V 3.0.