900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




  NEC Electronic Components Datasheet  

A1615 Datasheet

2SA1615

No Preview Available !

DATA SHEET
SILICON POWER TRANSISTORS
2SA1615, 1615-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation
and are ideal for high-efficiency DC/DC converters due to the fast switching speed.
FEATURES
• Large current capacity:
IC(DC): 10 A, IC(pulse): 15 A
• High hFE and low collector saturation voltage:
hFE = 200 MIN. (@VCE = 2.0 V, IC = 0.5 A)
VCE(sat) ≤ −0.25 V (@IC = 4.0 A, IB = 0.05 A)
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC
www.DataSheet4U.com Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (pulse)
IC(pulse)*
Base current (DC)
Total power dissipation
IB(DC)
PT (Ta = 25°C)**
Total power dissipation
PT (Tc = 25°C)
Junction temperature
Tj
Storage temperature
Tstg
* PW 10 ms, duty cycle 50%
** Printing board mounted
Ratings
30
20
10
10
15
0.5
1.0
15
150
55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16119EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002


  NEC Electronic Components Datasheet  

A1615 Datasheet

2SA1615

No Preview Available !

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO VCB = 20 V, IE = 0
Emitter cutoff current
IEBO VEB = 8.0 V, IC = 0
DC current gain
hFE1* VCE = 2.0 V, IC = 0.5 A
DC current gain
hFE2* VCE = 2.0 V, IC = 4.0 A
Collector saturation voltage VCE(sat)* IC = 4.0 A, IB = 0.05 A
Base saturation voltage
VBE(sat)* IC = 4.0 A, IB = 0.05 A
Gain bandwidth product
fT VCE = 5.0 V, IE = 1.5 A
Output capacity
Cob VCB = 10 V, IE = 0, f = 1.0 MHz
Turn-on time
Storage time
ton IC = 5.0 A, IB1 = IB2 = 0.125 A,
tstg RL = 2.0 , VCC ≅ −10 V
Fall time
tf
* Pulse test PW 350 µs, duty cycle 2%
hFE CLASSIFICATION
Marking
hFE2
L
200 to 400
K
300 to 600
PACKAGE DRAWING (UNIT: mm)
2SA1615
2SA1615, 1615-Z
MIN.
200
160
TYP.
0.2
0.9
180
220
80
300
60
MAX.
1.0
1.0
600
0.25
1.2
Unit
µA
µA
V
V
MHz
pF
ns
ns
ns
2SA1615-Z
Electrode Connection
1. Base
2. Collector
3. Emitter
4. Collector (fin)
2 Data Sheet D16119EJ1V0DS


Part Number A1615
Description 2SA1615
Maker NEC
Total Page 6 Pages
PDF Download

A1615 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 A1615 2SA1615
NEC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy