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  NEC Electronic Components Datasheet  

A1744 Datasheet

2SA1744

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DATA SHEET
SILICON POWER TRANSISTOR
2SA1744
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1744 is a power transistor developed for high-speed
switching and features a high hFE at Low VCE(sat). This transistor is
ideal for use as a driver in DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
• High hFE and low VCE(sat):
hFE 100 (VCE = 2 V, IC = 3 A)
VCE(sat) 0.3 V (IC = 8 A, IB = 0.4 A)
• Full-mold package that does not require an insulating board or
bushing
PACKAGE DRAWING (UNIT: mm)
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ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (pulse)
IC(pulse)*
Base current (DC)
Total power dissipation
IB(DC)
PT (Tc = 25°C)
Total power dissipation
PT (Ta = 25°C)
Junction temperature
Tj
Storage temperature
Tstg
* PW 300 µs, duty cycle 10%
Ratings
100
60
7.0
15
30
7.5
30
2.0
150
55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
Electrode Connection
1. Base
2. Collector
3. Emitter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13160EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
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  NEC Electronic Components Datasheet  

A1744 Datasheet

2SA1744

No Preview Available !

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Parameter
Symbol
Conditions
Collector to emitter voltage VCEO(SUS) IC = 8.0 A, IB = 0.8 A, L = 1 mH
Collector to emitter voltage
VCEX(SUS) IC = 8.0 A, IB1 = IB2 = 0.8 A,
VBE(OFF) = 1.5 V, L = 180 µH, clamped
Collector cutoff current
ICBO VCB = 60 V, IE = 0
Collector cutoff current
ICER VCE = 60 V, RBE = 50 , TA = 125°C
Collector cutoff current
ICEX1
VCE = 60 V, VBE(OFF) = 1.5 V
Collector cutoff current
ICEX2
VCE = 60 V, VBE(OFF) = 1.5 V,
TA = 125°C
Emitter cutoff current
IEBO VEB = 5.0 V, IC = 0
DC current gain
hFE1* VCE = 2.0 V, IC = 1.5 A
DC current gain
hFE2* VCE = 2.0 V, IC = 3.0 A
DC current gain
hFE3* VCE = 2.0 V, IC = 8.0 A
Collector saturation voltage VCE(sat)1* IC = 8.0 A, IB = 0.4 A
Collector saturation voltage VCE(sat)2* IC = 12 A, IB = 0.6 A
Base saturation voltage
VBE(sat)1* IC = 8.0 A, IB = 0.4 A
Base saturation voltage
VBE(sat)2* IC = 12 A, IB = 0.6 A
Collector capacitance
Cob VCB = 10 V, IE = 0, f = 1.0 MHz
Gain bandwidth product
fT VCE = 10 V, IC = 1.5 A
Turn-on time
Storage time
Fall time
ton IC = 8.0 A, RL = 6.3 ,
tstg
IB1 = IB2 = 0.4 A, VCC ≅ −50 V
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Refer to the test circuit.
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Marking
hFE2
M
100 to 200
L
150 to 300
K
200 to 400
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MIN.
60
60
TYP.
MAX.
Unit
V
V
10 µA
1.0 mA
10 µA
1.0 mA
10 µA
100
100 400
60
0.3 V
0.5 V
1.2 V
1.5 V
300 pF
80 MHz
0.3 µs
1.5 µs
0.3 µs
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datasheet pdf - http://www.DataSheet4U.net/


Part Number A1744
Description 2SA1744
Maker NEC
Total Page 6 Pages
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