* Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 G.

of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device befor.

The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. PACKAGE DIMENSIONS in millimeters (inches) 5.2 MAX. (0.204 MAX.) FEATURES
.

C3354

C3356

C3358

C3300

C3302

C3303

C3306

C3307

C330Cxx

C330Cxxxx

C331

C3310

C3311