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Silicon Power Transistors
2SC3631,3631-Z
NPN
VCEO 400 V tf 0.7 μs
TA = 25°C
VCBO
VCEO
VEBO
2
IC(DC) 1 IC(pulse)
PT
Tj
Tstg
1. PW 10 ms, Duty Cycle 50
2. TC = 25°C
500 400
7 2.0 4.0 10 150 -55~+150
V V V A A W °C °C
1.6 ±0.2
6.5 ±0.2 5.0 ±0.2
4
123
1.1 ±0.2
1.5
+0.2 −0.1
mm
2.3 ±0.2 0.5 ±0.1
7.0 MIN. 5.5 ±0.2 13.7 MIN.
2.3 2.3
0.5
+0.2 −0.1
0.5
+0.2 −0.1
0.75
TO-251 MP-3
6.5 ±0.2 5.0 ±0.2 4.4 ±0.2
4
1.5
+0.2 −0.1
2.3 ±0.2 0.5 ±0.1
1.0 ±0.5 0.4 MIN. 0.5 TYP.
2.5 ±0.5
5.6 ±0.3 9.5 ±0.5
5.5 ±0.2
123
2.3 ±0.3
0.5 ±0.1 2.3 ±0.3
0.5 ±0.1 0.15 ±0.15
TO-252 MP-3Z
1. 2. 3. 4.
0 0.