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DATA SHEET
SILICON TRANSISTOR
2SC5194
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise
NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • 4-Pin Compact Mini Mold Package
ORDERING INFORMATION
PART NUMBER QUANTITY
PACKING STYLE
2SC5194-T1
3 Kpcs/Reel
Embossed tape 8 mm wide. Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape.
2SC5194-T2
3 Kpcs/Reel
Embossed tape 8 mm wide. Pin 1 (Collector), Pin 2 (Emitter) face to perforation side of the tape.
Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.