Datasheet Summary
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD4564441, 4564841, 4564163
64M-bit Synchronous DRAM 4-bank, LVTTL
Description
The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 × 4 × 4, 2,097,152 × 8 × 4, 1,048,576 ×16 × 4 (word × bit × bank), respectively.
The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive edge of the clock. The synchronous DRAMs are patible with Low Voltage TTL (LVTTL). These products are packaged in 54-pin TSOP (II).
Features
- Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock...