Download D789477 Datasheet PDF
D789477 page 2
Page 2
D789477 page 3
Page 3

D789477 Description

Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate.