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  NEC Electronic Components Datasheet  

HR1A4 Datasheet

on-chip resistor PNP silicon epitaxial transistor

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HR1A4 pdf
DATA SHEET
COMPOUND TRANSISTOR
HR1 SERIES
on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching
FEATURES
• Up to 2A high current drives such as IC outputs and actuators
available
• On-chip bias resistor
• Low power consumption during drive
PACKAGE DRAWING (UNIT: mm)
HR1 SERIES LISTS
Products
Marking
HR1A3M
HR1F3P
HR1L3N
HR1A4,
HR1L2Q
HR1F2Q
HR1A4A
MP
MQ
MR
MS
MT
MU
MX
R1 (K)
1.0
2.2
4.7
10
0.47
0.22
R2 (K)
1.0
10
10
10
4.7
2.2
10
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (Pulse)
IC(pulse) *
Base current (DC)
IB(DC)
Total power dissipation
PT **
Junction temperature
Tj
Storage temperature
Tstg
* PW 10 ms, duty cycle 50 %
** When 0.7 mm × 16 cm2 ceramic board is used
Ratings
60
60
10
1.0
2.0
0.02
2.0
150
55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16184EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
© 21090928
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  NEC Electronic Components Datasheet  

HR1A4 Datasheet

on-chip resistor PNP silicon epitaxial transistor

No Preview Available !

HR1A4 pdf
+5$0
(/(&75,&$/ &+$5$&7(5,67,&6 7D °&
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Low level output voltage
VOL **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
3:  µV GXW\ F\FOH 
Conditions
VCB = 60 V, IE = 0
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 1.0 A
VIN = 5.0 V, IC = 0.4 A
VCE = 5.0 V, IC = 100 µA
+5)3
(/(&75,&$/ &+$5$&7(5,67,&6 7D °&
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Low level output voltage
VOL **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
3:  µV GXW\ F\FOH 
Conditions
VCB = 60 V, IE = 0
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 1.0 A
VIN = 5.0 V, IC = 0.3 A
VCE = –5.0 V, IC = 100 µA
+5/1
(/(&75,&$/ &+$5$&7(5,67,&6 7D °&
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Low level output voltage
VOL **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
3:  µV GXW\ F\FOH 
Conditions
VCB = 60 V, IE = 0
VCE = 2.0 V, IC = 0.1 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 1.0 A
VIN = 5.0 V, IC = 0.2 A
VCE = 5.0 V, IC = 100 µA
HR1 SERIES
MIN.
50
100
50
0.7
0.7
TYP.
MAX.
100
0.4
0.3
1.0 1.3
1.0 1.3
Unit
nA
V
V
k
k
MIN.
150
100
50
1.54
7
TYP.
MAX.
100
0.3
0.3
2.2 2.86
10 13
Unit
nA
V
V
k
k
MIN.
150
100
50
3.29
7
TYP.
MAX.
100
0.3
0.3
4.7 6.11
10 13
Unit
nA
V
V
k
k
 'DWD 6KHHW '(-9'6
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Part Number HR1A4
Description on-chip resistor PNP silicon epitaxial transistor
Maker NEC
Total Page 6 Pages
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