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K2364 - 2SK2364

Description

The 2SK2363/2SK2364 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

Features

  • 10.0±0.3.
  • Low On-Resistance 2SK2363: RDS (on) = 0.5 Ω (VGS = 10 V, ID = 4.0 A) 2SK2364: RDS (on) = 0.6 Ω (VGS = 10 V, ID = 4.0 A) 3.2±0.2 4.5±0.2 2.7±0.2 Drain to Source Voltage (2SK2363/2SK2364) Gate to Source Voltage Drain Current (DC) Drain Current (pulse).
  • Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current.
  • Single Avalanche Energy.
  • PW ≤ 10 µs, Duty Cycle ≤ 1 % VD.

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Datasheet preview – K2364

Datasheet Details

Part number K2364
Manufacturer NEC
File Size 135.80 KB
Description 2SK2364
Datasheet download datasheet K2364 Datasheet
Additional preview pages of the K2364 datasheet.

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2363/2SK2364 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2363/2SK2364 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) FEATURES 10.0±0.3 • Low On-Resistance 2SK2363: RDS (on) = 0.5 Ω (VGS = 10 V, ID = 4.0 A) 2SK2364: RDS (on) = 0.6 Ω (VGS = 10 V, ID = 4.0 A) 3.2±0.2 4.5±0.2 2.7±0.
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