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K2365 - 2SK2365

General Description

MOS Field Effect Transistor designed for high voltage switching applications.

Key Features

  • Low On-Resistance 2SK2365: RDS(on) = 0.5 Ω (VGS = 10 V, ID = 5.0 A) 2SK2366: RDS(on) = 0.6 Ω (VGS = 10 V, ID = 5.0 A).
  • Low Ciss Ciss = 1 600 pF TYP.
  • High Avalanche Capability Ratings.
  • Isolate TO-220 Package.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
K2362 2SK2362
K2364 2SK2364
K2368 2SK2368
K2341 2SK2341
K2354 2SK2354

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2365/2SK2366 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2365, 2SK2365-Z/2SK2366, 2SK2366-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-Resistance 2SK2365: RDS(on) = 0.5 Ω (VGS = 10 V, ID = 5.0 A) 2SK2366: RDS(on) = 0.6 Ω (VGS = 10 V, ID = 5.0 A) • Low Ciss Ciss = 1 600 pF TYP. • High Avalanche Capability Ratings • Isolate TO-220 Package ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage (2SK2365/2SK2366) VDSS 450/500 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID(DC) ±10 A Drain Current (pulse)* ID(pulse) ±40 A Total Power Dissipation (Tc = 25 ˚C) PT1 75 W Total Power Dissipation (TA = 25 ˚C) PT2 1.