K2364 Datasheet 2sk2364

Manufacturer: NEC (now Renesas Electronics)

Overview: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2363/2SK2364 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL.

Datasheet Details

The 2SK2363/2SK2364 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

PACKAGE DIMENSIONS (in millimeter)

10.0±0.3.
Low On-Resistance 2SK2363: RDS (on) = 0.5 Ω (VGS = 10 V, ID = 4.0 A) 2SK2364: RDS (on) = 0.6 Ω (VGS = 10 V, ID = 4.0 A) 3.2±0.2 4.5±0.2 2.7±0.2 Drain to Source Voltage (2SK2363/2SK2364) Gate to Source Voltage Drain Current (DC) Drain Current (pulse).
Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current.
Single Avalanche Energy.
PW ≤ 10 µs, Duty Cycle ≤ 1 % VD.