Datasheet4U Logo Datasheet4U.com

K2370 - 2SK2370

Description

The 2SK2369/2SK2370 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

15.7 MAX 4 4.7 MAX.

Features

  • Low On-Resistance 2SK2370: RDS(on) = 0.4 Ω (VGS = 10 V, ID = 10 A) 20.0 ± 0.2.
  • Low Ciss Ciss = 2400 pF TYP.
  • High Avalanche Capability Ratings.

📥 Download Datasheet

Datasheet preview – K2370

Datasheet Details

Part number K2370
Manufacturer NEC
File Size 141.40 KB
Description 2SK2370
Datasheet download datasheet K2370 Datasheet
Additional preview pages of the K2370 datasheet.

📁 Similar Datasheet

  • K2375 - 2SK2375 (Panasonic Semiconductor)
  • K2377 - Silicon N-Channel Power F-MOS (Panasonic)
  • K2312 - 2SK2312 (Toshiba Semiconductor)
  • K2312 - N-Channel 60V MOSFET (VBsemi)
  • K2313 - 2SK2313 (Toshiba Semiconductor)
  • K2313 - 2SK2313 (Toshiba Semiconductor)
  • K2314 - N-Channel 100-V MOSFET (VBsemi)
  • K2324 - 2SK2324 (Panasonic)
  • K2325TJ600 - Medium Voltage Thyristor (IXYS)
  • K2325TJ650 - Medium Voltage Thyristor (IXYS)
Other Datasheets by NEC

Full PDF Text Transcription

Click to expand full text
DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2369/2SK2370 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2369/2SK2370 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) φ 3.0 ± 0.2 1.0 15.7 MAX 4 4.7 MAX. 1.5 FEATURES • Low On-Resistance 2SK2370: RDS(on) = 0.4 Ω (VGS = 10 V, ID = 10 A) 20.0 ± 0.2 • Low Ciss Ciss = 2400 pF TYP.
Published: |