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K2414 - 2SK2414

General Description

The 2SK2414 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

Key Features

  • 1.6 ±0.2 5.0 ±0.2 4 1.5.
  • 0.1 +0.2 2.3 ±0.2 0.5 ±0.1 RDS(on)1 = 70 mΩ MAX. (@ VGS = 10 V, ID = 5.0 A) RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A) 1 2 3.
  • Low Ciss Ciss = 840 pF TYP.
  • Built-in G-S Gate Protection Diodes.
  • High Avalanche Capability Ratings.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR 2SK2414, 2SK2414-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2414 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) 6.5 ±0.2 FEATURES 1.6 ±0.2 5.0 ±0.2 4 1.5 –0.1 +0.2 2.3 ±0.2 0.5 ±0.1 RDS(on)1 = 70 mΩ MAX. (@ VGS = 10 V, ID = 5.0 A) RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A) 1 2 3 • Low Ciss Ciss = 840 pF TYP. • Built-in G-S Gate Protection Diodes • High Avalanche Capability Ratings QUALITY GRADE Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. 1.