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K2480 - 2SK2480

General Description

The 2SK2480 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

Key Features

  • 10.0±0.3.
  • Low On-Resistance RDS (on) = 4.0 Ω (VGS = 10 V, ID = 2.0 A) 15.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 3±0.1 4±0.2.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
K2481 2SK2481
K2485 2SK2485
K2487 2SK2487
K2488 2SK2488
K2411 2SK2411

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2480 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2480 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) FEATURES 10.0±0.3 • Low On-Resistance RDS (on) = 4.0 Ω (VGS = 10 V, ID = 2.0 A) 15.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 3±0.1 4±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 900 ± 30 ± 3.0 ± 12 35 2.0 150 3.0 37.