Datasheet4U Logo Datasheet4U.com

K2481 - 2SK2481

General Description

signed for high voltage switching applications.

Key Features

  • Low On-Resistance RDS(on) = 4.0 Ω (VGS = 10 V, ID = 2.0 A).
  • Low Ciss Ciss = 900 pF TYP.
  • High Avalanche Capability Ratings.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
K2480 N-Channel 900V Power MOSFET VBsemi
K2484 N-Channel 900V Power MOSFET VBsemi
K240 Silicon Zener Diodes Aeroflex
K240 LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE Knox Inc
K2400EH70 High Energy Bidirectional SIDACs Littelfuse

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
K2480 2SK2480
K2485 2SK2485
K2487 2SK2487
K2488 2SK2488
K2411 2SK2411

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2481 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2481 is N-Channel MOS Field Effect Transistor de- signed for high voltage switching applications. FEATURES • Low On-Resistance RDS(on) = 4.0 Ω (VGS = 10 V, ID = 2.0 A) • Low Ciss Ciss = 900 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDSS 900 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID(DC) ±4.0 A Drain Current (pulse)* ID(pulse) ±12 A Total Power Dissipation (Tc = 25 ˚C) PT1 70 W Total Power Dissipation (TA = 25 ˚C) PT2 1.5 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Single Avalanche Current** IAS 4.0 A Single Avalanche Energy** EAS 65.