| Part Number | K2480 Datasheet |
|---|---|
| Manufacturer | NEC |
| Overview |
The 2SK2480 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter)
FEATURES
10.0±0.3
• Low On-Resistance
RDS (on) = 4.0 Ω (VGS.
10.0±0.3
* Low On-Resistance RDS (on) = 4.0 Ω (VGS = 10 V, ID = 2.0 A) 15.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 3±0.1 4±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Di. |
K2480 Datasheet and Specifications PDF
The K2480 is a 2SK2480.
| Part Number | K2480 Datasheet |
|---|---|
| Description | N-Channel 900V Power MOSFET |
| Manufacturer | VBsemi |
| Overview |
K2480-VB
K2480-VB Datasheet
N-Channel 900V (D-S) Super Junction Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
900
VGS = 10 V
1.3.
* Dynamic dV/dt Rating * Repetitive Avalanche Rated * Isolated Central Mounting Hole * Fast Switching * Ease of Paralleling * Simple Drive Requirements * Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT TO-220AB D G GD S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC . |