* Low on-resistance RDS(on)1 = 20 mΩ (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 27 mΩ (MAX.) (VGS = 4.5 V, ID = 15 A)
* Low Ciss Ciss = 1200 pF TYP.
* Built-in.

of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device befor.

This product is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES
* Low on-resistance RDS(on)1 = 20 mΩ (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 27 mΩ (MAX.) (VGS = 4.5 V, ID = 15 A)
* Low Ciss Ci.

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K2900-01

K2902-01MR

K2915

K2917

K2919

K2925

K2926

K2929

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