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K2983 - 2SK2983

Description

This product is N-Channel MOS Field Effect Transistor designed for high current switching application.

Features

  • Low on-resistance RDS(on)1 = 20 mΩ (MAX. ) (VGS = 10 V, ID = 15 A) RDS(on)2 = 27 mΩ (MAX. ) (VGS = 4.5 V, ID = 15 A).
  • Low Ciss Ciss = 1200 pF TYP.
  • Built-in gate protection diode.

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Datasheet Details

Part number K2983
Manufacturer NEC
File Size 63.72 KB
Description 2SK2983
Datasheet download datasheet K2983 Datasheet

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2983 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-resistance RDS(on)1 = 20 mΩ (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 27 mΩ (MAX.) (VGS = 4.5 V, ID = 15 A) • Low Ciss Ciss = 1200 pF TYP. • Built-in gate protection diode ORDERING INFOMATION PART NUMBER 2SK2983 2SK2983-S 2SK2983-ZJ PACKAGE TO-220AB TO-262 TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source VoltageNote1 Gate to Source VoltageNote2 VDSS VGSS 30 ±20 Drain Current (DC) Drain Current (pulse)Note3 ID(DC) ID(pulse) ±30 ±120 Total Power Dissipation (TA = 25°C) PT 1.
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