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K3057 - 2SK3057

General Description

designed for high current switching application.

Key Features

  • Low on-state resistance RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 23 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4 V, ID = 23 A).
  • Low Ciss: Ciss = 2100 pF TYP.
  • Built-in gate protection diode.
  • Isolated TO-220 package.

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Datasheet Details

Part number K3057
Manufacturer NEC
File Size 60.75 KB
Description 2SK3057
Datasheet download datasheet K3057 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3057 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-state resistance RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 23 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4 V, ID = 23 A) • Low Ciss: Ciss = 2100 pF TYP.