K3296
Description
The 2SK3296 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
Key Features
- 4.5 V drive available
- Low on-state resistance RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 18 A)
- Low gate charge QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V)
- Built-in gate protection diode
- Surface mount device available
