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  NEC Electronic Components Datasheet  

K3365 Datasheet

2SK3365

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3365
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3365 is N-Channel MOS Field Effect Transistor
designed for DC/DC converters application of notebook
computers.
FEATURES
Low on-resistance
RDS(on)1 = 14 m(MAX.) (VGS = 10 V, ID = 15 A)
RDS(on)2 = 21 m(MAX.) (VGS = 4.5 V, ID = 15 A)
RDS(on)3 = 29 m(MAX.) (VGS = 4.0 V, ID = 15 A)
Low Ciss : Ciss = 1300 pF (TYP.)
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3365
TO-251
2SK3365-Z
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC)
Drain Current (Pulse) Note
ID(DC)
ID(pulse)
±30
±120
Total Power Dissipation (TC = 25 °C) PT 36
Total Power Dissipation (TA = 25 °C) PT 1.0
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to + 150
V
V
A
A
W
W
°C
°C
Note PW 10 µs, Duty cycle 1 %
THERMAL RESISTANCE
Channel to case
Channel to ambient
Rth(ch-C)
Rth(ch-A)
3.48 °C/W
125 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14255EJ1V0DS00 (1st edition)
Date Published September 1999 NS CP(K)
Printed in Japan
©
1999


  NEC Electronic Components Datasheet  

K3365 Datasheet

2SK3365

No Preview Available !

2SK3365
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain to Source On-state Resistance
RDS(on)1 VGS = 10 V, ID = 15 A
RDS(on)2 VGS = 4.5 V, ID = 15 A
RDS(on)3 VGS = 4.0 V, ID = 15 A
Gate to Source Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 15 A
Drain Leakage Current
IDSS VDS = 30 V, VGS = 0 V
Gate to Source Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Input Capacitance
Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-on Delay Time
td(on)
ID = 15 A, VGS(on) = 10 V, VDD = 15 V,
Rise Time
tr RG = 10
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG ID = 30 A, VDD = 24 V, VGS = 10 V
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
Body Diode forward Voltage
VF(S-D) IF = 30 A, VGS = 0 V
Reverse Recovery Time
trr IF = 30 A, VGS = 0 V
Reverse Recovery Charge
Qrr di/dt = 100 A/µs
MIN. TYP. MAX. UNIT
11.5 14 m
15.2 21 m
18 29 m
1.5 2.0 2.5 V
8.0 16.0
S
10 µA
±10 µA
1300
pF
405 pF
190 pF
37 ns
500 ns
75 ns
95 ns
25 nC
4.5 nC
7.0 nC
1.0 V
35 ns
32 nC
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
RG
PG. RG = 10
VGS
0
τ
τ = 1µs
Duty Cycle 1 %
RL
VDD
VGS
VGS
Wave Form
0 10 %
VGS (on) 90 %
ID 90 %
ID
Wave Form
0 10 %
ID
90 %
10 %
td (on) tr td (off) tf
ton toff
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D14255EJ1V0DS00


Part Number K3365
Description 2SK3365
Maker NEC
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K3365 Datasheet PDF





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